Download E-books Nanoscale CMOS VLSI Circuits: Design for Manufacturability PDF

By Sandip Kundu

Cutting-Edge CMOS VLSI layout for Manufacturability Techniques

This unique advisor bargains confirmed tools for optimizing circuit designs to extend the yield, reliability, and manufacturability of goods and mitigate defects and failure. masking the newest units, applied sciences, and procedures, Nanoscale CMOS VLSI Circuits: layout for Manufacturability specializes in providing better functionality and decrease strength intake. expenditures, constraints, and computational efficiencies also are mentioned within the functional source.

Nanoscale CMOS VLSI Circuits covers:

  • Current tendencies in CMOS VLSI layout
  • Semiconductor production applied sciences
  • Photolithography
  • Process and equipment variability: analyses and modeling
  • Manufacturing-Aware actual layout Closure
  • Metrology, production defects, and disorder extraction
  • Defect influence modeling and yield development concepts
  • Physical layout and reliability
  • DFM instruments and methodologies

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Three. four Off-Axis Illumination . . . . . . . . . . . . . . . . . . four. four actual layout for DFM . . . . . . . . . . . . . . . . . . . . four. four. 1 Geometric layout principles . . . . . . . . . . . . . . . . . four. four. 2 Restrictive layout ideas . . . . . . . . . . . . . . . . . four. four. three Model-Based ideas cost and Printability Verification four. four. four Manufacturability-Aware normal cellphone layout . . . . four. four. five Mitigating the Antenna impact . . . . . . . . . . . . . four. four. 6 Placement and Routing for DFM . . . . . . . . . . . . four. five complicated Lithographic innovations . . . . . . . . . . . . . . . four. five. 1 Double Patterning . . . . . . . . . . . . . . . . . . . . four. five. 2 Inverse Lithography . . . . . . . . . . . . . . . . . . . four. 6 different complicated suggestions . . . . . . . . . . . . . . . . . . . four. 7 precis . . . . . . . . . . . . . . . . . . . . . . . . . . . . . four. eight References . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . eleven 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 five Metrology, production Defects, and disorder Extraction five. 1 advent . . . . . . . . . . . . . . . . . . . . . . . . . . . . five. 2 Process-Induced Defects . . . . . . . . . . . . . . . . . . . . . five. 2. 1 class of errors assets . . . . . . . . . . . . . five. 2. 2 illness interplay and electric results . . . . . . . . five. 2. three Modeling Particle Defects . . . . . . . . . . . . . . . . five. 2. four format tips on how to increase serious sector . . . . . . . five. three Pattern-Dependent Defects . . . . . . . . . . . . . . . . . . . five. three. 1 Pattern-Dependent disorder forms . . . . . . . . . . . . five. three. 2 development Density difficulties . . . . . . . . . . . . . . . . five. three. three Statistical method of Modeling Patterning Defects . five. three. four structure equipment That Mitigate Patterning Defects . . five. four Metrology . . . . . . . . . . . . . . . . . . . . . . . . . . . . . five. four. 1 Precision and Tolerance in dimension . . . . . . . . five. four. 2 CD Metrology . . . . . . . . . . . . . . . . . . . . . . five. four. three Overlay Metrology . . . . . . . . . . . . . . . . . . . . five. four. four different In-Line Measurements . . . . . . . . . . . . . . five. four. five In-Situ Metrology . . . . . . . . . . . . . . . . . . . . five. five Failure research thoughts . . . . . . . . . . . . . . . . . . . five. five. 1 Nondestructive recommendations . . . . . . . . . . . . . . . five. five. 2 damaging strategies . . . . . . . . . . . . . . . . . five. 6 precis . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . thirteen 14 14 14 14 14 14 14 14 14 14 14 14 14 14 14 14 14 14 14 14 14 3 CONTENTS five. 7 References . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 6 disorder effect Modeling and Yield development thoughts 15 6. 1 advent . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 6. 2 Modeling the impression of Defects on Circuit habit . . . . . . . 15 6. 2. 1 Defect-Fault dating . . . . . . . . . . . . . . . . . . 15 6. three Yield development . . . . . . . . . . . . . . . . . . . . . . . . . . sixteen 6. three. 1 Fault Tolerance . . . . . . . . . . . . . . . . . . . . . . . . sixteen 6. three. 2 Fault Avoidance . . . . . . . . . . . . . . . . . . . . . . . sixteen 6. four precis . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . sixteen 6. five References . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . sixteen 7 actual layout and Reliability 7. 1 creation . . . . . . . . . . . . . . . . . . . . . . . 7. 2 Electromigration . . . . . . . . . . . . . . . . . . . . 7. three sizzling provider results . . . . . . . . . . . . . . . . . . . 7. three. 1 sizzling provider Injection Mechanisms . . . . . . 7. three. 2 equipment harm features . . . . . . . . 7. three. three Time-Dependent Dielectric Breakdown . . . . 7. three. four Mitigating HCI-Induced Degradation . . . . . 7. four unfavourable Bias Temperature Instability . . . . . . . . 7. four. 1 Reaction-Diffusion version . . . . . . . . . . . 7. four. 2 Static and Dynamic NBTI . . . . . . . . . . . 7. four. three layout options . . . . .

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